| PART |
Description |
Maker |
| 2SB1182 2SB1240 |
Medium power transistor (32V,2A)
|
Rohm
|
| 2SC1741S |
Medium Power Transistor (32V, 0.5A)
|
ROHM[Rohm]
|
| 2SB1237 2SA1515S 2SA1515S10 |
Medium Power Transistor (-32V,-1A)
|
Rohm
|
| 2SA1577 |
Medium Power Transistor (-32V, -05A)
|
Rohm
|
| L2SD1781KRLT1G L2SD1781KLT1 L2SD1781KQLT1 L2SD1781 |
Medium Power Transistor(32V, 0.8A) 中等功率晶体管（32V的，0.8A
|
Leshan Radio Company, Ltd.
LRC[Leshan Radio Company]
|
| 2SB1237 2SA1515S 2SB1132 2SB1132_1 |
Medium Power Transistor (−32V,−1A)
|
ROHM[Rohm]
|
| 2DB1188P-13 2DB1188Q 2DB1188Q-13 2DB1188R 2DB1188R |
32V PNP MEDIUM POWER TRANSISTOR IN SOT89
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
|
Diodes Incorporated
|
| 2SC2411K 2SC2411KT146Q |
Medium Power Transistor (32V, 0.5A)
|
Rohm
|
| T2G4003532-FS-15 |
30W, 32V DC 3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
